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Kwok K. Sze S. M. Ng

Physics of Semiconductor Devices

€ 218.85

This classic reference provides detailed information on the underlying physics and operational characteristics of all major bipolar, unipolar, special microwave, and o


Taal / Language : English

Inhoudsopgave:
Introduction 1(6)
Part I Semiconductor Physics
Chapter 1 Physics and Properties of Semiconductors A Review
7(72)
1.1 Introduction,
7(1)
1.2 Crystal Structure,
8(4)
1.3 Energy Bands and Energy Gap,
12(4)
1.4 Carrier Concentration at Thermal Equilibrium,
16(12)
1.5 Carrier-Transport Phenomena,
28(22)
1.6 Phonon, Optical, and Thermal Properties,
50(6)
1.7 Heterojunctions and Nanostructures,
56(6)
1.8 Basic Equations and Examples,
62(17)
Part II Device Building Blocks
Chapter 2 p-n Junctions
79(55)
2.1 Introduction,
79(1)
2.2 Depletion Region,
80(10)
2.3 Current-Voltage Characteristics,
90(12)
2.4 Junction Breakdown,
102(12)
2.5 Transient Behavior and Noise,
114(4)
2.6 Terminal Functions,
118(6)
2.7 Heterojunctions,
124(10)
Chapter 3 Metal-Semiconductor Contacts
134(63)
3.1 Introduction,
134(1)
3.2 Formation of Barrier,
135(18)
3.3 Current Transport Processes,
153(17)
3.4 Measurement of Barrier Height,
170(11)
3.5 Device Structures,
181(6)
3.6 Ohmic Contact,
187(10)
Chapter 4 Metal-Insulator-Semiconductor Capacitors
197(46)
4.1 Introduction,
197(1)
4.2 Ideal MIS Capacitor,
198(15)
4.3 Silicon MOS Capacitor,
213(30)
Part III Transistors
Chapter 5 Bipolar Transistors
243(50)
5.1 Introduction,
243(1)
5.2 Static Characteristics,
244(18)
5.3 Microwave Characteristics,
262(13)
5.4 Related Device Structures,
275(7)
5.5 Heterojunction Bipolar Transistor,
282(11)
Chapter 6 MOSFETs
293(81)
6.1 Introduction,
293(4)
6.2 Basic Device Characteristics,
297(23)
6.3 Nonuniform Doping and Buried-Channel Device,
320(8)
6.4 Device Scaling and Short-Channel Effects,
328(11)
6.5 MOSFET Structures,
339(8)
6.6 Circuit Applications,
347(3)
6.7 Nonvolatile Memory Devices,
350(10)
6.8 Single-Electron Transistor,
360(14)
Chapter 7 JFETs, MESFETs, and MODFETs
374(43)
7.1 Introduction,
374(1)
7.2 JFET and MESFET,
375(26)
7.3 MODFET,
401(16)
Part IV Negative-Resistance and Power Devices
Chapter 8 Tunnel Devices
417(49)
8.1 Introduction,
417(1)
8.2 Tunnel Diode,
418(17)
8.3 Related Tunnel Devices,
435(19)
8.4 Resonant-Tunneling Diode,
454(12)
Chapter 9 IMPATT Diodes
466(44)
9.1 Introduction,
466(1)
9.2 Static Characteristics,
467(7)
9.3 Dynamic Characteristics,
474(8)
9.4 Power and Efficiency,
482(7)
9.5 Noise Behavior,
489(4)
9.6 Device Design and Performance,
493(4)
9.7 BARITT Diode,
497(7)
9.8 TUNNETT Diode,
504(6)
Chapter 10 Transferred-Electron and Real-Space-Transfer Devices
510(38)
10.1 Introduction,
510(1)
10.2 Transferred-Electron Device,
511(25)
10.3 Real-Space-Transfer Devices,
536(12)
Chapter 11 Thyristors and Power Devices
548(53)
11.1 Introduction,
548(1)
11.2 Thyristor Characteristics,
549(25)
11.3 Thyristor Variations,
574(8)
11.4 Other Power Devices,
582(19)
Part V Photonic Devices and Sensors
Chapter 12 LEDs and Lasers
601(62)
12.1 Introduction,
601(2)
12.2 Radiative Transitions,
603(5)
12.3 Light-Emitting Diode (LED),
608(13)
12.4 Laser Physics,
621(9)
12.5 Laser Operating Characteristics,
630(21)
12.6 Specialty Lasers,
651(12)
Chapter 13 Photodetectors and Solar Cells
663(80)
13.1 Introduction,
663(4)
13.2 Photoconductor,
667(4)
13.3 Photodiodes,
671(12)
13.4 Avalanche Photodiode,
683(11)
13.5 Phototransistor,
694(3)
13.6 Charge-Coupled Device (CCD),
697(15)
13.7 Metal-Semiconductor-Metal Photodetector,
712(4)
13.8 Quantum-Well Infrared Photodetector,
716(3)
13.9 Solar Cell,
719(24)
Chapter 14 Sensors
743(30)
14.1 Introduction,
743(1)
14.2 Thermal Sensors,
744(6)
14.3 Mechanical Sensors,
750(8)
14.4 Magnetic Sensors,
758(7)
14.5 Chemical Sensors,
765(8)
Appendixes 773(20)
A. List of Symbols,
775(10)
B. International System of Units,
785(1)
C. Unit Prefixes,
786(1)
D. Greek Alphabet,
787(1)
E. Physical Constants,
788(1)
F. Properties of Important Semiconductors,
789(1)
G. Properties of Si and GaAs,
790(1)
H. Properties of SiO2 and Si3N4,
791(2)
Index 793
Extra informatie: 
Hardback
815 pagina's
Januari 2006
1247 gram
241 x 165 x 44 mm
Wiley-Interscience us

Levertijd: 5 tot 11 werkdagen