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Singh, Raminderpal

Silicon Germanium

Silicon Germanium

€ 201.95

"An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. "
Ron Wilson, EETimes

"SiGe technology has demonstrated the ability to provide excellent high performance characteristics with very low noise, at high power gain, and with excellent linearity.


Taal / Language : English

Inhoudsopgave:
Contributors ix
Foreword xiii
Preface xvii
Acknowledgments xxi
Acronyms xxiii
Introduction 1(20)
A Historical Perspective at IBM 21(26)
1 Technology Development 47(56)
Overview
47(1)
1.1 Active Devices
48(10)
1.2 Technology Development: Advanced Passives and ESD Protection
58(19)
1.3 Process Development
77(7)
1.4 Technology Implications in SiGe Design
84(19)
2 Modeling and Characterization 103(60)
Overview
103(1)
2.1 Predictive Modeling
104(12)
2.2 Characterization
116(11)
2.3 Compact-Model Development: Active Devices
127(21)
2.4 Compact-Model Development: Advanced Passives
148(15)
3 Design Automation and Signal Integrity 163(70)
Overview
163(1)
3.1 Design Automation Overview
164(16)
3.2 ESD: Best-Practice CAD Implementation
180(14)
3.3 Interconnect Extraction and Modeling
194(23)
3.4 Substrate Noise Isolation and Modeling
217(16)
4 Leading-Edge Applications 233(86)
Overview
233(1)
4.1 Wired Communications: SONET Design
234(37)
4.2 Wireless Design: A Direct Conversion Receiver IC for WCDMA Mobile Systems
271(25)
4.3 Wireless Design: Ericsson Power-Amplifier Design
296(8)
4.4 Memory Design: A 32-Word by 32-Bit Three-Port Bipolar Register File
304(15)
Appendix. Summary of IBM Foundry Offerings 319(16)
Index 335(3)
About the Authors 338
Extra informatie: 
Hardback
368 pagina's
Januari 2003
644 gram
241 x 157 x 23 mm
Wiley-Blackwell us

Levertijd: 5 tot 11 werkdagen