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Nederlands Buitenlands   Alles  Titel  Auteur  ISBN        
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T. P. Ma

Ionizing Radiation Effects in MOS Devices and Circuits

€ 377.95

The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process induced radiation effects in the fabrication of high density circuits.


Taal / Language : English

Inhoudsopgave:
Historical Perspective (H. Hughes).

Electron Hole Generation, Transport, and Trapping in SiO2 (F. McLean, et al.).

Radiation Induced Interface Traps (P. Winokur).

Radiation Effects on MOS Devices and Circuits (P. Dressendorfer).

Radiation Hardening Technology (P. Dressendorfer).

Process Induced Radiation Effects (T. Ma).

Source Considerations and Testing Techniques (K. Kerris).

Transient Ionization and Single Event Phenomena (S. Kerns).

Index.
Extra informatie: 
Hardback
608 pagina's
Januari 1989
1016 gram
237 x 164 x 42 mm
Wiley-Blackwell us

Levertijd: 5 tot 11 werkdagen