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Liu, William Fundamentals of III-V Devices
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Liu, William

Fundamentals of III-V Devices

HBTs, MESFETs, and HFETs/HEMTs

€ 246.95

An introductory guide to heterojunction bipolar and field effect transistors, this handbook addresses the industry s growing need for faster, low powered devices for use in cellular and wireless communications. These devices replace silicon bipolar transistors, promising superior performance in less time.


Taal / Language : English

Inhoudsopgave:
Preface xi
Basic Properties and Device Physics of III-V Materials
1(68)
Semiconductor Crystalline Properties
1(13)
Molecular Beam Epitaxy
14(7)
Metal-Organic Chemical Vapor Deposition
21(5)
Lattice-Mismatched Layers
26(1)
Basic Device Physics
27(15)
Continuity Equations and Quasi-Neutrality Assumption
42(15)
Material Parameters
57(12)
References 69(1)
Problems 69(69)
Two-Terminal Heterojunction Devices
73(65)
p+-N Heterojunction under Thermal Equilibrium
73(14)
p+-N Heterojunction under External Bias
87(6)
p-N+, P+-n, and P-n+ Heterojunctions
93(8)
Graded Heterojunctions
101(9)
Diode Current--Voltage Characteristics
110(15)
Space-Charge Recombination and Generation Currents
125(7)
Isotype Heterojunctions
132(6)
References 138(1)
Problems 139(76)
HBT D.C. Characteristics
143(72)
Basic Transistor Operation
143(8)
Base Current Components
151(12)
Current Gain Flattening
163(3)
Surface Passivation
166(4)
Base Quasi-Electric Field
170(7)
Emitter Crowding
177(4)
Intrinsic Base Resistance
181(5)
Kirk Effect
186(10)
Avalanche Breakdown
196(10)
Collapse of Current Gain
206(9)
References 215(1)
Problems 215(63)
HBT High-Frequency Properties
220(58)
Intrinsic Common-Base y-Parameters
220(19)
Intrinsic Common-Emitter y-Parameters
239(5)
Hybrid-π Model
244(6)
Parasitic Resistances
250(10)
Cutoff Frequency (ft)
260(7)
Maximum Oscillation Frequency (fmax)
267(6)
Example: Calculation of ft and fmax
273(5)
References 278(1)
Problems 278(82)
FET D.C. Characteristics
281(79)
Metal-Semiconductor Junction
281(12)
Basic MESFET Operation
293(17)
Velocity Saturation in the MESFET
310(7)
Nonuniform Doping Profiles
317(6)
Modulation Doping
323(7)
The Heterojunction FET (HFET)
330(15)
Velocity Saturation in the HFET
345(5)
Avalanche Breakdown
350(10)
References 360(1)
Problems 361(82)
FET High-Frequency Properties
371(72)
Quasi-Static Operation in the HFET
371(15)
Quasi-Static Operation in the MESFET
386(9)
Intrinsic y-Parameters
395(22)
Hybrid-π Model and Channel Resistance
417(5)
Gate Resistance
422(7)
Source/Brain Resistances and Parasitic Capacitances
429(8)
Cutoff and Maximum Oscillation Frequencies
437(5)
Exemplar Calculation of ft and fmax
442(1)
References 443(1)
Problems 444(29)
Transistor Fabrication And Device Comparison
447(26)
HBT D.C. Fabrication
447(8)
HBT R.F. Fabrication
455(7)
FET Fabrication
462(5)
HBT and FET Comparison
467(6)
Reference 473(1)
Problems 473(1)
Appendix A Mesfet y-Parameters 474(7)
Appendix B HFET y-parameters 481(9)
Appendix C Parasitic Capacitances 490(5)
Appendix D Universal Constants and Units 495(1)
Appendix E Semiconductor Material Parameters at Room Temperature 496(1)
Appendix F Heterojunction Parameters at Room Temperature 497(2)
Index 499
Extra informatie: 
Hardback
520 pagina's
Januari 1999
839 gram
254 x 178 x 32 mm
Wiley-Blackwell us

Levertijd: 5 tot 11 werkdagen