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G. Gillen

Secondary Ion Mass Spectrometry SIMS XI

€ 1006.45

This volume contains 252 contributions presented as plenary, invited and contributed poster and oral presentations at the 11th International Conference on Secondary Ion Mass Spectrometry (SIMS XI) held at the Hilton Hotel, Walt Disney World Village, Orlando, Florida, 7 12 September, 1997.


Taal / Language : English

Inhoudsopgave:
Partial table of contents:

PLENARY LECTURES.

Sputtering Artifacts in SIMS Depth Profiles (invited) (P. Williams).

ISOTOPIC SIMS.

SIMS Studies of Corrosion in Nuclear Reactor Components (invited) (S. Bushby & G. Bickel).

BIOLOGICAL SIMS.

Mapping Phosphocholine Secondary Ion Emission from the Brain (P. Todd, et al.).

SEMICONDUCTOR CHARACTERIZATION
TECHNIQUES.

The State of the Art of Two Dimensional Dopant Profiling (invited) (M. Dowsett).

SEMICONDUCTOR CHARACTERIZATION
APPLICATIONS.

Characterization of GaN and Related Compounds by SIMS Analysis (Y. Gao, et al.).

ULTRA SHALLOW DEPTH PROFILING.

SIMS Depth Profiling of Ultra Shallow Implants and Junctions in Silicon
Present Performance and Future Potential (invited) (M. Dowsett).

DEPTH PROFILING FUNDAMENTAL/MODELING.

Ion Beam Induced Nitridation and Oxidation of Silicon (M. Petravc, et al.).

DEPTH PROFILING
DIFFUSION.

Diffusion of Silicon in Ion Implanted GaAs (J. Likonen, et al.).

SPUTTER INDUCED TOPOGRAPHY.

Surface Topography on InP Produced by Ion Bombardment (Y. Homma, et al.).

FUNDAMENTALS OF MOLECULAR DESORPTION.

Mechanistic Study of Particle Bombardment of an Alkanethiolate/Au System (K. Liu, et al.).

ORGANIC MATERIALS.

Depth Profiling Studies of Interfacial Phenomena in Polymer Thin Films (Y. Strzhemechny, et al.).

PRACTICAL TOF SIMS.

Applications of Time of Flight SIMS in the Chemical Industry (invited) (K. Lloyd, et al.).

POLYATOMIC PRIMARY IONS.

Chemical Effects in Ion Formation Induced by Polyatomic Ion Impacts on Inorganic Targets (R. English, et al.).

MATERIALS/SURFACE ANALYSIS.

The Use of Static and Dynamic SIMS in the Analysis of Ceramic and Amorphous Materials (E. Leone).

POSTIONIZATION.

Fundamental Investigations with Imaging Laser SNMS (A. Schnieders, et al.).

INSTRUMENTATION.

A New Time of Flight Secondary Ion Mass Spectrometer with Integral Ion Gun (C. Lawrence, et al.).

GEOLOGICAL SIMS.

Rare Earth Elements Sensitivity Factors in Calcic Plagioclase (Anorthite) (C. Floss & B. Jolliff).

IMAGING.

Dynamic SIMS Imaging Using Sector Field Instruments (invited) (P. van der Heide).

FUNDAMENTALS OF SPUTTERING AND ION FORMATION.

Secondary Ion Emission from keV Cluster Impacts (invited) (M. Van Stipdonk, et al.).

FUNDAMENTALS OF SPUTTERING CLUSTER FORMATION.

Formation of Sputtered Semiconductor Clusters (R. Heinrich & A. Wucher).

QUANTITATIVE ANALYSIS.

Multiple Element Ion Implants for Metal Contamination Analysis in Semiconductor Technology (F. Stevie, et al.).

ENVIRONMENTAL/PARTICLE CHARACTERIZATION.

Disappearance Cross Sections of Ammonium Adsorbates on Environmental Surfaces (G. Groenewold, et al.).

RELATED TECHNIQUES.

Surface Analysis of all Elements with Isotopic Resolution at High Ambient Pressures Using Ion Spectroscopic Techniques (V. Smentkowski, et al.).

Indexes.
Extra informatie: 
Hardback
1150 pagina's
Januari 1998
1490 gram
235 x 155 x 56 mm
Wiley-Blackwell us

Levertijd: 5 tot 11 werkdagen